Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S215ATMA2

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Kr.124 43 

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Kr.155 54 

(inc. VAT)

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10 - 90Kr. 12,443Kr. 124,43
100 - 240Kr. 11,829Kr. 118,29
250 - 490Kr. 11,314Kr. 113,14
500 - 990Kr. 10,834Kr. 108,34
1000 +Kr. 10,102Kr. 101,02

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Packaging Options:
RS Stock No.:
222-4664
Mfr. Part No.:
IPD30N06S215ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

14.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

41nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

2.3mm

Length

6.5mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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