Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 2500 units)*

Kr.10 427 50 

(exc. VAT)

Kr.13 035 00 

(inc. VAT)

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  • Plus 2 500 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
2500 - 2500Kr. 4,171Kr. 10 427,50
5000 +Kr. 3,963Kr. 9 907,50

*price indicative

RS Stock No.:
223-8514
Mfr. Part No.:
IPD26N06S2L35ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.95V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

68W

Typical Gate Charge Qg @ Vgs

1nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS series N-channel MOSFET in DPAK package. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.

Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package

•Ultra low Rds

•100% Avalanche tested

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