Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC

RS Stock No.:: 165-7249
Mfr. Part No.:: SI4178DY-T1-GE3
Brand:: Vishay

Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC

Subtotal (1 reel of 2500 units)*

Kr. 6 460,00

(exc. VAT)

Kr. 8 075,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

Temporarily out of stock

Shipping from 26 October 2026

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Units	Per unit	Per Reel*
2500 +	Kr. 2,584	Kr. 6 460,00

*price indicative

RS Stock No.:: 165-7249
Mfr. Part No.:: SI4178DY-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Series	Si4178DY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7.5nC
	Maximum Power Dissipation Pd	5W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25V
	Forward Voltage Vf	0.85V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	4mm
	Height	1.55mm
	Length	5mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Series Si4178DY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7.5nC
	Maximum Power Dissipation Pd 5W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25V
	Forward Voltage Vf 0.85V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 4mm
	Height 1.55mm
	Length 5mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3

This is a surface-mount N-channel MOSFET intended for power switching and high-current applications within electronic systems. It operates as an enhancement-mode transistor and is supplied in an SOIC-8 package for PCB mounting. The device supports moderate voltage switching and is suitable for designs requiring Compact power transistors with controlled gate-charge characteristics.

Features and Benefits:

• 30V maximum drain voltage enabling low-voltage power switching • 12A continuous drain current for handling high load currents • 33mΩ drain-source resistance for reduced conduction losses • 7.5nC typical gate charge for Faster switching transitions • 5W power dissipation capacity for sustained thermal performance • -55°C to 150°C operating range for wide thermal tolerance

Applications

• Suitable for DC power distribution switches in automation panels • Ideal for motor driver low-side switching in industrial drives • Used for load switching in power-management circuits for control systems • Can be used for synchronous rectification in Compact power converters • Suitable for battery protection and power-path control in machinery

What gate-voltage limits should be observed during design?

The gate-source voltage must not exceed ±25V to prevent gate-oxide stress and ensure reliable switching.

How should thermal management be approached on the PCB?

Given a 5W dissipation rating, provide adequate copper area and thermal vias to lower junction temperature during continuous high-current operation.

What pin-count and package considerations affect layout?

The device arrives in an 8-pin SOIC package, so track widths and pad spacing should accommodate surface-mount assembly and thermal conduction.

What electrical characteristic governs switching speed in Pulse applications?

The typical gate charge of 7.5nC is the key parameter influencing drive requirements and switching transition times when selecting gate drivers.