Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

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Subtotal (1 pack of 20 units)*

Kr.100 22 

(exc. VAT)

Kr.125 28 

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 180Kr. 5,011Kr. 100,22
200 - 480Kr. 4,01Kr. 80,20
500 - 980Kr. 3,764Kr. 75,28
1000 - 1980Kr. 3,255Kr. 65,10
2000 +Kr. 2,706Kr. 54,12

*price indicative

Packaging Options:
RS Stock No.:
812-3205
Mfr. Part No.:
SI4178DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

Si4178DY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

0.85V

Maximum Operating Temperature

150°C

Length

5mm

Width

4 mm

Height

1.55mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

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