Infineon HEXFET Type P-Channel MOSFET, 6 A, 30 V Enhancement, 7-Pin PQFN

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Subtotal (1 reel of 4000 units)*

Kr.9 500 00 

(exc. VAT)

Kr.11 876 00 

(inc. VAT)

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  • Final 36 000 unit(s), ready to ship
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4000 +Kr. 2,375Kr. 9 500,00

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RS Stock No.:
165-7468
Mfr. Part No.:
IRFHS9301TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

2.1W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

0.95mm

Width

2.1 mm

Length

2.1mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
TH

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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