DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN

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Subtotal (1 reel of 3000 units)*

Kr.5 643 00 

(exc. VAT)

Kr.7 053 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 1,881Kr. 5 643,00

*price indicative

RS Stock No.:
165-8742
Mfr. Part No.:
DMN2014LHAB-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

9.3A

Maximum Drain Source Voltage Vds

20V

Package Type

UDFN

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

1.7W

Typical Gate Charge Qg @ Vgs

0.5nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Length

3.05mm

Standards/Approvals

AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202

Width

2.05 mm

Height

0.6mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Dual N-Channel MOSFET, Diodes Inc.


MOSFET Transistors, Diodes Inc.


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