DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

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Subtotal (1 pack of 50 units)*

Kr.171 85 

(exc. VAT)

Kr.214 80 

(inc. VAT)

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50 +Kr. 3,437Kr. 171,85

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Packaging Options:
RS Stock No.:
827-0462
Mfr. Part No.:
DMN2014LHAB-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

9.3A

Maximum Drain Source Voltage Vds

20V

Package Type

UDFN

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.7W

Typical Gate Charge Qg @ Vgs

0.5nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

12 V

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Length

3.05mm

Standards/Approvals

AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202

Width

2.05 mm

Height

0.6mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Dual N-Channel MOSFET, Diodes Inc.


MOSFET Transistors, Diodes Inc.


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