STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

Kr.14 858 00 

(exc. VAT)

Kr.18 572 00 

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +Kr. 14,858Kr. 14 858,00

*price indicative

RS Stock No.:
166-0942
Mfr. Part No.:
STB18N60DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Series

MDmesh DM2

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

90W

Typical Gate Charge Qg @ Vgs

20nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.6mm

Length

9.35mm

Width

10.4 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MDmesh DM2 Series, STMicroelectronics


The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability

AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics


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