Infineon HEXFET N-Channel MOSFET, 24 A, 30 V, 3-Pin TO-220AB IRL2703PBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
166-1023
Mfr. Part No.:
IRL2703PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

30 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Width

4.69mm

Length

10.54mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Height

8.77mm

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.