onsemi BSS84 Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 166-2408
Mfr. Part No.:: BSS84
Brand:: onsemi

onsemi BSS84 Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23

Bulk discount available

Subtotal (1 reel of 3000 units)*

Kr.4 497 00

(exc. VAT)

Kr.5 622 00

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

Shipping from 11. mai 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 - 3000	Kr. 1,499	Kr. 4 497,00
6000 - 12000	Kr. 1,46	Kr. 4 380,00
15000 +	Kr. 1,424	Kr. 4 272,00

*price indicative

RS Stock No.:: 166-2408
Mfr. Part No.:: BSS84
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	130mA
	Maximum Drain Source Voltage Vds	50V
	Package Type	SOT-23
	Series	BSS84
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	0.9nC
	Minimum Operating Temperature	-65°C
	Maximum Power Dissipation Pd	250mW
	Maximum Operating Temperature	150°C
	Length	3mm
	Width	1.3 mm
	Standards/Approvals	No
	Height	1mm
	Automotive Standard	AEC-Q200, AEC-Q100, AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 130mA
	Maximum Drain Source Voltage Vds 50V
	Package Type SOT-23
	Series BSS84
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 0.9nC
	Minimum Operating Temperature -65°C
	Maximum Power Dissipation Pd 250mW
	Maximum Operating Temperature 150°C
	Length 3mm
	Width 1.3 mm
	Standards/Approvals No
	Height 1mm
	Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.