onsemi NDT Type N-Channel MOSFET, 2.8 A, 60 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 4000 units)*

Kr.14 796 00 

(exc. VAT)

Kr.18 496 00 

(inc. VAT)

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Per Reel*
4000 +Kr. 3,699Kr. 14 796,00

*price indicative

RS Stock No.:
166-2837
Mfr. Part No.:
NDT014L
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Series

NDT

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3W

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

3.6nC

Forward Voltage Vf

0.85V

Maximum Operating Temperature

150°C

Length

6.7mm

Height

1.7mm

Width

3.7 mm

Standards/Approvals

No

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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