IXYS HiperFET, Polar N-Channel MOSFET, 72 A, 600 V Enhancement, 4-Pin SOT-227 IXFN82N60P

Subtotal (1 tube of 10 units)*

Kr. 5 352,78

(exc. VAT)

Kr. 6 690,98

(inc. VAT)

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Units
Per unit
Per Tube*
10 +Kr. 535,278Kr. 5 352,78

*price indicative

RS Stock No.:
168-4484
Mfr. Part No.:
IXFN82N60P
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-30V, +30V

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

1.04kW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

240nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.6mm

Width

25.07mm

Length

38.2mm

Automotive Standard

No

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