IXYS HiperFET, Polar Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

Kr. 4 208,84

(exc. VAT)

Kr. 5 261,05

(inc. VAT)

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  • 250 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 +Kr. 420,884Kr. 4 208,84

*price indicative

RS Stock No.:
168-4494
Mfr. Part No.:
IXFN60N80P
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

800V

Series

HiperFET, Polar

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

1.04kW

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

250nC

Maximum Operating Temperature

150°C

Width

25.42 mm

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Automotive Standard

No

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