IXYS Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227

View all MOSFETs

Subtotal (1 tube of 10 units)*

Kr.4 208 84 

(exc. VAT)

Kr.5 261 05 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 380 unit(s) shipping from 26. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 +Kr. 420,884Kr. 4 208,84

*price indicative

RS Stock No.:
168-4494
Mfr. Part No.:
IXFN60N80P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

250nC

Maximum Power Dissipation Pd

1.04kW

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.6mm

Width

25.42 mm

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links