IXYS HiperFET, Polar Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227 IXFN60N80P
- RS Stock No.:
- 194-350
- Distrelec Article No.:
- 302-53-376
- Mfr. Part No.:
- IXFN60N80P
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
Kr.497 64
(exc. VAT)
Kr.622 05
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 48 unit(s) ready to ship
- Plus 4 unit(s) ready to ship from another location
- Plus 377 unit(s) shipping from 16. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | Kr. 497,64 |
| 2 - 4 | Kr. 427,51 |
| 5 - 9 | Kr. 416,19 |
| 10 - 19 | Kr. 405,55 |
| 20 + | Kr. 395,37 |
*price indicative
- RS Stock No.:
- 194-350
- Distrelec Article No.:
- 302-53-376
- Mfr. Part No.:
- IXFN60N80P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | HiperFET, Polar | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 250nC | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 25.42 mm | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series HiperFET, Polar | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 250nC | ||
Maximum Power Dissipation Pd 1.04kW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 25.42 mm | ||
Height 9.6mm | ||
Length 38.23mm | ||
Automotive Standard No | ||
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Related links
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