IXYS Trench Type N-Channel MOSFET, 110 A, 250 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.2 144 55 

(exc. VAT)

Kr.2 680 68 

(inc. VAT)

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  • 30 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 +Kr. 71,485Kr. 2 144,55

*price indicative

RS Stock No.:
168-4583
Mfr. Part No.:
IXTH110N25T
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

250V

Series

Trench

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Power Dissipation Pd

694W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

21.46mm

Length

16.26mm

Width

5.3 mm

Automotive Standard

No

N-Channel Trench-Gate Power MOSFET, IXYS


Trench Gate MOSFET Technology

Low on-state Resistance RDS(on)

Superior avalanche ruggedness

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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