IXYS Trench Type N-Channel MOSFET, 110 A, 250 V Enhancement, 3-Pin TO-247 IXTH110N25T
- RS Stock No.:
- 125-8047
- Distrelec Article No.:
- 302-53-421
- Mfr. Part No.:
- IXTH110N25T
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
Kr.116 77
(exc. VAT)
Kr.145 96
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 41 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 116,77 |
| 5 - 9 | Kr. 107,42 |
| 10 - 24 | Kr. 101,02 |
| 25 - 49 | Kr. 87,17 |
| 50 + | Kr. 83,40 |
*price indicative
- RS Stock No.:
- 125-8047
- Distrelec Article No.:
- 302-53-421
- Mfr. Part No.:
- IXTH110N25T
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | Trench | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 694W | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 30253421 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series Trench | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 694W | ||
Maximum Operating Temperature 150°C | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Distrelec Product Id 30253421 | ||
Automotive Standard No | ||
N-Channel Trench-Gate Power MOSFET, IXYS
Trench Gate MOSFET Technology
Low on-state Resistance RDS(on)
Superior avalanche ruggedness
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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