IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.5 423 37 

(exc. VAT)

Kr.6 779 22 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 180,779Kr. 5 423,37

*price indicative

RS Stock No.:
168-4698
Mfr. Part No.:
IXFH18N100Q3
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

660mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

90nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

830W

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.3 mm

Length

16.26mm

Height

16.26mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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