IXYS HiperFET, Polar3 N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-3P IXFQ50N50P3

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar3

Package Type

TO-3P

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

960 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

15.8mm

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

85 nC @ 10 V

Height

20.3mm

Minimum Operating Temperature

-55 °C