STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 1.85 A, 1 kV Enhancement, 3-Pin IPAK STU2NK100Z
- RS Stock No.:
- 168-7526
- Mfr. Part No.:
- STU2NK100Z
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 75 units)*
Kr. 555,075
(exc. VAT)
Kr. 693,825
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 23 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | Kr. 7,401 | Kr. 555,08 |
| 150 - 450 | Kr. 5,773 | Kr. 432,98 |
| 525 - 900 | Kr. 4,884 | Kr. 366,30 |
| 975 - 4950 | Kr. 4,071 | Kr. 305,33 |
| 5025 + | Kr. 3,833 | Kr. 287,48 |
*price indicative
- RS Stock No.:
- 168-7526
- Mfr. Part No.:
- STU2NK100Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.85A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | IPAK | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 70W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 6.9mm | |
| Length | 6.6mm | |
| Width | 2.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.85A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type IPAK | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 70W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 6.9mm | ||
Length 6.6mm | ||
Width 2.4 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin IPAK
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-252