STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 1 A, 600 V Enhancement, 3-Pin IPAK STD1NK60-1
- RS Stock No.:
- 761-2704
- Mfr. Part No.:
- STD1NK60-1
- Brand:
- STMicroelectronics
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Add 50 more to save Kr. 133,50
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Kr. 37,70
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Kr. 47,10
(inc. VAT)
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- Plus 5 unit(s) shipping from 09 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 45 | Kr. 7,54 | Kr. 37,70 | - |
| 50 - 120 | Kr. 4,87 | Kr. 24,35 | Kr. 133,50 |
| 125 - 495 | Kr. 3,582 | Kr. 17,91 | Kr. 494,75 |
| 500 - 2495 | Kr. 3,204 | Kr. 16,02 | Kr. 2 168,00 |
| 2500 + | Kr. 2,828 | Kr. 14,14 | Kr. 11 780,00 |
*price indicative
- RS Stock No.:
- 761-2704
- Mfr. Part No.:
- STD1NK60-1
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Power Dissipation Pd | 30W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Length | 6.6mm | |
| Width | 6.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Power Dissipation Pd 30W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Length 6.6mm | ||
Width 6.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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