Our Services
Support
New products
Parcel Tracking
Log In / Sign up
Login
/
Register
to access your benefits
Menu
MPN
Recently searched
Automation & Control Gear
Cables & Wires
Enclosures & Server Racks
Fuses & Circuit Breakers
HVAC, Fans & Thermal Management
Lighting
Relays & Signal Conditioning
Switches
Batteries & Chargers
Connectors
Displays & Optoelectronics
ESD Control, Cleanroom & PCB Prototyping
Passive Components
Power Supplies & Transformers
Raspberry Pi, Arduino, ROCK, STEM Education & Development Tools
Semiconductors
Access, Storage & Material Handling
Adhesives, Sealants & Tapes
Bearings & Seals
Engineering Materials & Industrial Hardware
Fasteners & Fixings
Hand Tools
Mechanical Power Transmission
Plumbing & Pipeline
Pneumatics & Hydraulics
Power Tools, Soldering & Welding
Computing & Peripherals
Facilities Cleaning & Maintenance
Office Supplies
Personal Protective Equipment & Workwear
Security & Ironmongery
Site Safety
Test & Measurement
Semiconductors
Discrete Semiconductors
MOSFETs
Semiconductors
Discrete Semiconductors
MOSFETs
N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 Toshiba TK58E06N1
RS Stock No.:
168-7779
Mfr. Part No.:
TK58E06N1
Brand:
Toshiba
View all MOSFETs
Available to back order for despatch 08.10.2024
Add to Basket
Units
Back order
Add to a parts list
Price Each (In a Tube of 50)
Kr. 9,184
(exc. VAT)
Kr. 11,48
(inc. VAT)
Units
Per unit
Per Tube*
50 +
Kr. 9,184
Kr. 459,20
*price indicative
RS Stock No.:
168-7779
Mfr. Part No.:
TK58E06N1
Brand:
Toshiba
Technical Reference
Legislation and Compliance
Product Details
Specifications
TK58E06N1, Silicon N-channel MOSFET (U-MOSVIII-H) Data Sheet
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
COO (Country of Origin):
JP
MOSFET Transistors, Toshiba
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
105 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
46 nC @ 10 V
Transistor Material
Si
Width
4.45mm
Number of Elements per Chip
1
Length
10.16mm
Maximum Operating Temperature
+150 °C
Height
15.1mm
RS Stock No.:
168-7779
Mfr. Part No.:
TK58E06N1
Brand:
Toshiba
Technical Reference
Legislation and Compliance
Product Details
Specifications
TK58E06N1, Silicon N-channel MOSFET (U-MOSVIII-H) Data Sheet
ESD Control Selection Guide V1
RoHS Certificate of Compliance
Statement of conformity
COO (Country of Origin):
JP
MOSFET Transistors, Toshiba
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
105 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
46 nC @ 10 V
Transistor Material
Si
Width
4.45mm
Number of Elements per Chip
1
Length
10.16mm
Maximum Operating Temperature
+150 °C
Height
15.1mm