Nexperia PMV16XN Type N-Channel MOSFET, 8.6 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

Kr.4 218 00 

(exc. VAT)

Kr.5 274 00 

(inc. VAT)

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  • 3 000 unit(s) shipping from 20. mai 2026
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Units
Per unit
Per Reel*
3000 +Kr. 1,406Kr. 4 218,00

*price indicative

RS Stock No.:
170-4851
Mfr. Part No.:
PMV16XNR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.6A

Maximum Drain Source Voltage Vds

20V

Series

PMV16XN

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

6.94W

Typical Gate Charge Qg @ Vgs

13.4nC

Maximum Operating Temperature

150°C

Width

1.4 mm

Standards/Approvals

No

Length

3mm

Height

1mm

Automotive Standard

No

COO (Country of Origin):
CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability of 1200 mW

Target applications

LED driver

Power management

Low-side load switch

Switching circuits

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