Nexperia PMV30UN2 Type N-Channel MOSFET, 5.4 A, 20 V Enhancement, 3-Pin SOT-23 PMV30UN2R
- RS Stock No.:
- 170-5432
- Mfr. Part No.:
- PMV30UN2R
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.185 90
(exc. VAT)
Kr.232 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 09. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | Kr. 3,718 | Kr. 185,90 |
| 250 - 450 | Kr. 3,345 | Kr. 167,25 |
| 500 - 1200 | Kr. 2,979 | Kr. 148,95 |
| 1250 - 2450 | Kr. 2,606 | Kr. 130,30 |
| 2500 + | Kr. 2,233 | Kr. 111,65 |
*price indicative
- RS Stock No.:
- 170-5432
- Mfr. Part No.:
- PMV30UN2R
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PMV30UN2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PMV30UN2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1000 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
Related links
- Nexperia PMV30UN2 N-Channel MOSFET 20 V, 3-Pin SOT-23 PMV30UN2R
- Diodes Inc DMN3069L N-Channel MOSFET 30 V, 3-Pin SOT-23 DMN3069L-7
- Nexperia N-Channel MOSFET 20 V215
- Nexperia PMV16XN N-Channel MOSFET 20 V, 3-Pin SOT-23 PMV16XNR
- Nexperia N-Channel MOSFET 20 V, 3-Pin SOT-23 PMV13XNEAR
- Nexperia N-Channel MOSFET 20 V, 3-Pin SOT-23 PMV20XNEAR
- Nexperia N-Channel MOSFET 20 V, 3-Pin SOT-23 PMV28UNEAR
- Nexperia N-Channel MOSFET 30 V135