Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

Bulk discount available

Subtotal 100 units (supplied on a continuous strip)*

Kr. 753,90

(exc. VAT)

Kr. 942,40

(inc. VAT)

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Units
Per unit
100 - 240Kr. 7,539
250 - 490Kr. 7,219
500 - 990Kr. 6,921
1000 +Kr. 6,429

*price indicative

Packaging Options:
RS Stock No.:
171-1913P
Mfr. Part No.:
SI4435DYTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Series

Si4435DYPbF

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.5mm

Length

5mm

Automotive Standard

No

Non Compliant with RoHS

The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.

P-channel MOSFET

Surface mount

Available in tape and reel

Lead free