Infineon IPD600N25N3 G Type N-Channel MOSFET, 25 A, 250 V Enhancement, 5-Pin TO-252 IPD600N25N3GATMA1

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Subtotal (1 pack of 10 units)*

Kr.243 21 

(exc. VAT)

Kr.304 01 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10Kr. 24,321Kr. 243,21
20 - 40Kr. 19,94Kr. 199,40
50 - 90Kr. 18,727Kr. 187,27
100 - 240Kr. 17,515Kr. 175,15
250 +Kr. 16,05Kr. 160,50

*price indicative

Packaging Options:
RS Stock No.:
171-1948
Mfr. Part No.:
IPD600N25N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

250V

Series

IPD600N25N3 G

Package Type

TO-252

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.41mm

Width

7.47 mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon IPD600N25N3 G is 250V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Industries lowest R DS(on)

Lowest Q g and Q gd

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