Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.33 487 50 

(exc. VAT)

Kr.41 860 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 13,395Kr. 33 487,50

*price indicative

RS Stock No.:
170-2287
Mfr. Part No.:
IPD200N15N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-252

Series

IPD200N15N3 G

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Length

10.36mm

Height

4.57mm

Width

9.45 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.

Excellent switching performance

Worlds lowest R DS(on)

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