Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1

RS Stock No.:: 171-1937
Mfr. Part No.:: IPD053N08N3GATMA1
Brand:: Infineon

Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1

Subtotal (1 pack of 10 units)*

Kr.111 90

(exc. VAT)

Kr.139 90

(inc. VAT)

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In Stock

Plus 8 950 unit(s) shipping from 29. desember 2025

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Units	Per unit	Per Pack*
10 +	Kr. 11,19	Kr. 111,90

*price indicative

RS Stock No.:: 171-1937
Mfr. Part No.:: IPD053N08N3GATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	80V
	Series	IPD053N08N3 G
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	9.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	150W
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	2.41mm
	Width	7.36 mm
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 80V
	Series IPD053N08N3 G
	Package Type TO-252
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 9.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 150W
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 2.41mm
	Width 7.36 mm
	Length 6.73mm
	Automotive Standard No

IPD053N08N3 Datasheet

RoHS Status: Not Applicable

Infineon MOSFET

The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 5.3mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 80V. It has a maximum power dissipation of 150W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET tackles the most challenging applications giving full flexibility in limited spaces. It is designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual sided cooling

• Excellent gate charge x RDS (ON) product (FOM)

• Lead (Pb) free plating

• Low parasitic inductance

• Low profile (<0, 7mm)

• Operating temperature ranges between -55°C and 175°C

• Optimized technology for DC-DC converters

• Superior thermal resistance

Applications

• AC-DC

• Adapter

• DC-DC

• LED

• Motor control

• PC power

• Server power supplies

• SMPS

• Solar

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC