Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1

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Subtotal (1 pack of 10 units)*

Kr.188 65 

(exc. VAT)

Kr.235 81 

(inc. VAT)

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  • Plus 70 unit(s) shipping from 29. desember 2025
  • Plus 400 unit(s) shipping from 05. januar 2026
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Units
Per unit
Per Pack*
10 - 10Kr. 18,865Kr. 188,65
20 - 40Kr. 15,089Kr. 150,89
50 - 90Kr. 14,151Kr. 141,51
100 - 240Kr. 13,213Kr. 132,13
250 +Kr. 12,744Kr. 127,44

*price indicative

Packaging Options:
RS Stock No.:
171-1945
Mfr. Part No.:
IPD200N15N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Series

IPD200N15N3 G

Package Type

TO-252

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.36mm

Standards/Approvals

No

Width

9.45 mm

Height

4.57mm

Automotive Standard

No

The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.

Excellent switching performance

Worlds lowest R DS(on)

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