Infineon IPD200N15N3 G N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1
- RS Stock No.:
- 171-1945
- Mfr. Part No.:
- IPD200N15N3GATMA1
- Brand:
- Infineon
Get a bulk buy discount
Add 20 more to save Kr. 73,68
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 183,96
(exc. VAT)
Kr. 229,95
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 30 unit(s) ready to ship
- Plus 50 unit(s) shipping from 18 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 10 | Kr. 18,396 | Kr. 183,96 | - |
| 20 - 40 | Kr. 14,712 | Kr. 147,12 | Kr. 73,68 |
| 50 - 90 | Kr. 13,808 | Kr. 138,08 | Kr. 229,40 |
| 100 - 240 | Kr. 13,133 | Kr. 131,33 | Kr. 526,30 |
| 250 + | Kr. 12,813 | Kr. 128,13 | Kr. 1 395,75 |
*price indicative
- RS Stock No.:
- 171-1945
- Mfr. Part No.:
- IPD200N15N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | IPD200N15N3 G | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.45mm | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series IPD200N15N3 G | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Width 9.45mm | ||
Height 4.57mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.
Excellent switching performance
Worlds lowest R DS(on)
Related links
- Infineon IPD200N15N3 G N-Channel MOSFET 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1
- Infineon IPD600N25N3 G N-Channel MOSFET 250 V Enhancement, 5-Pin TO-252 IPD600N25N3GATMA1
- Infineon IPD053N08N3 G N-Channel MOSFET 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1
- Infineon IPD25CN10N G N-Channel MOSFET 100 V Enhancement, 5-Pin TO-252 IPD25CN10NGATMA1
- Infineon IPD068N10N3 G N-Channel MOSFET 100 V Enhancement, 5-Pin TO-252 IPD068N10N3GATMA1
- Infineon IPP075N15N3 G N-Channel MOSFET 150 V Enhancement, 4-Pin TO-220 IPP075N15N3GXKSA1
- Infineon IPP075N15N3 G N-Channel MOSFET 150 V Enhancement, 4-Pin TO-220
- onsemi FDD N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252 FDD86250-F085