Infineon OptiMOS Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSATMA1
- RS Stock No.:
- 171-1961
- Mfr. Part No.:
- BSC014N04LSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr. 135,91
(exc. VAT)
Kr. 169,89
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 5 000 unit(s) shipping from 17 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 13,591 | Kr. 135,91 |
| 50 - 90 | Kr. 10,994 | Kr. 109,94 |
| 100 - 240 | Kr. 10,307 | Kr. 103,07 |
| 250 - 490 | Kr. 9,632 | Kr. 96,32 |
| 500 + | Kr. 8,969 | Kr. 89,69 |
*price indicative
- RS Stock No.:
- 171-1961
- Mfr. Part No.:
- BSC014N04LSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 6.15 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 96W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 6.15 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon BSC014N04LS is the optiMOS power-MOSFET having PG-TDSON-8 type package. It has perfect switching behaviour for fast switching applications.
Very low on-state resistance RDS(on)
100% avalanche tested
Superior thermal resistance
Related links
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON BSC010NE2LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON BSC011N03LSIATMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON IAUC100N10S5N040ATMA1