RD3L080SNTL1 N-Channel MOSFET, 8 A, 60 V RD3L080SN, 2+Tab-Pin DPAK ROHM

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Subtotal 250 units (supplied on a reel)*

Kr.2 395 00 

(exc. VAT)

Kr.2 995 00 

(inc. VAT)

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Units
Per unit
250 - 475Kr. 9,58
500 - 975Kr. 8,714
1000 - 1975Kr. 7,492
2000 +Kr. 7,345

*price indicative

Packaging Options:
RS Stock No.:
172-0515P
Mfr. Part No.:
RD3L080SNTL1
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252

Series

RD3L080SN

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

109 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

15 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

9.4 nC @ 10 V

Width

6.4mm

Length

6.8mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.3mm

Forward Diode Voltage

1.5V

RD3L080SN is a Power MOSFET with Low on - resistance., suitable for Switching.

Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating

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