RD3L080SNTL1 N-Channel MOSFET, 8 A, 60 V RD3L080SN, 2+Tab-Pin DPAK ROHM
- RS Stock No.:
- 172-0515P
- Mfr. Part No.:
- RD3L080SNTL1
- Brand:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal 250 units (supplied on a reel)*
Kr. 2 395,00
(exc. VAT)
Kr. 2 995,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 250 - 475 | Kr. 9,58 |
| 500 - 975 | Kr. 8,714 |
| 1000 - 1975 | Kr. 7,492 |
| 2000 + | Kr. 7,345 |
*price indicative
- RS Stock No.:
- 172-0515P
- Mfr. Part No.:
- RD3L080SNTL1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-252 | |
| Series | RD3L080SN | |
| Mounting Type | Surface Mount | |
| Pin Count | 2 + Tab | |
| Maximum Drain Source Resistance | 109 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 15 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 9.4 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.8mm | |
| Width | 6.4mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.3mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-252 | ||
Series RD3L080SN | ||
Mounting Type Surface Mount | ||
Pin Count 2 + Tab | ||
Maximum Drain Source Resistance 109 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 15 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 9.4 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.8mm | ||
Width 6.4mm | ||
Number of Elements per Chip 1 | ||
Height 2.3mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
RD3L080SN is a Power MOSFET with Low on - resistance., suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
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