onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

RS Stock No.:: 172-4630
Mfr. Part No.:: FCB199N65S3
Brand:: onsemi

onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.296 98

(exc. VAT)

Kr.371 22

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

Shipping from 04. mai 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	Kr. 29,698	Kr. 296,98
100 - 240	Kr. 25,603	Kr. 256,03
250 +	Kr. 22,194	Kr. 221,94

*price indicative

RS Stock No.:: 172-4630
Mfr. Part No.:: FCB199N65S3
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	FCB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	199mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	98W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Width	9.65 mm
	Standards/Approvals	No
	Height	4.83mm
	Length	10.67mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series FCB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 199mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 98W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Width 9.65 mm
	Standards/Approvals No
	Height 4.83mm
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 30 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Internal Gate resistance: 7.0 ohm

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 170 mΩ

onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

FREE delivery for online orders over 500,00 kr

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