Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	600 V
	Series	R6020ENZ
	Package Type	TO-3PF
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	120 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Length	15.7mm
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Number of Elements per Chip	1
	Width	5.7mm
	Maximum Operating Temperature	+150 °C
	Height	26.7mm
	Forward Diode Voltage	1.5V

	Select all
	Brand ROHM
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 600 V
	Series R6020ENZ
	Package Type TO-3PF
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 120 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Length 15.7mm
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Number of Elements per Chip 1
	Width 5.7mm
	Maximum Operating Temperature +150 °C
	Height 26.7mm
	Forward Diode Voltage 1.5V

Datasheet

RoHS Status: Not Applicable

COO (Country of Origin):: TH

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating

ROHM R6020ENZ N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PF R6020ENZC8

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