Microchip TN2106 N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 177-9842P
- Mfr. Part No.:
- TN2106K1-G
- Brand:
- Microchip
Subtotal 20 units (supplied on a continuous strip)*
Kr. 131,80
(exc. VAT)
Kr. 164,80
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 2 100 unit(s) shipping from 09 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 + | Kr. 6,59 |
*price indicative
- RS Stock No.:
- 177-9842P
- Mfr. Part No.:
- TN2106K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TN2106 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TN2106 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Related links
- RS PRO PT100 RTD Sensor 100mm Long Probe, Class A +200°C Max
- SICK Encoder Collets for Use with DBS36E-BBxxxx
- RS PRO Silver Aluminium Profile Strut 8mm Groove, 1000mm Length
- SICK RE15 Series Actuator for Use with RE15-Sxxx
- Siemens SIMATIC S7-1200 Series PLC CPU for Use with SIMATIC S7-1200 Series Digital, Relay
- Motorola Talkabout T82 Extreme 16 Channel Walkie Talkies
- Littelfuse Through Hole Gas Discharge Tube
- Herga General Purpose Momentary Foot Switch - Thermoplastic Case Material 3 A@ 250 V ac Contact Current, 250V