Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF
- RS Stock No.:
- 178-0834
- Mfr. Part No.:
- IRF830APBF
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
Kr. 741,30
(exc. VAT)
Kr. 926,60
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 600 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 14,826 | Kr. 741,30 |
| 100 - 200 | Kr. 14,085 | Kr. 704,25 |
| 250 + | Kr. 13,344 | Kr. 667,20 |
*price indicative
- RS Stock No.:
- 178-0834
- Mfr. Part No.:
- IRF830APBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF830A | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF830A | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Width 4.7mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRF830A Series Power MOSFET, 500V Maximum Drain Source Voltage, 5A Maximum Continuous Drain Current - IRF830APBF
This power MOSFET is a through-hole N-channel enhancement device designed for high-voltage switching in industrial electronics. It is intended for applications where robust drain-to-source voltage handling and moderate current capacity are required, providing a Compact solution for power switching on heatsinked assemblies.
Features and Benefits:
• 500V Vds enables high-voltage switching in industrial circuits • 5A continuous drain current supports steady load operation • 1.4Ω Rds(on) minimises conduction losses under load • 74W maximum power dissipation for effective thermal handling • 24nC typical gate charge allows predictable switching behaviour • Vgs ±30V rating protects gate under control-signal excursions
Applications
• Suitable for high-voltage motor drive front-ends • Ideal for switch-mode power supplies in industrial equipment • Used for power conversion modules requiring through-hole mounting • Can be used for relay-replacement switching in control panels
What mounting method is required for reliable heat removal?
The device is supplied in a TO-220AB package for through-hole installation and benefits from a heatsink attached to the tab to achieve rated power dissipation.
How does the gate charge affect switching performance?
A typical gate charge of 24nC at rated conditions determines required driver strength and influences switching losses and rise/fall times in high-speed applications.
What temperature range can it operate within?
The component is rated to function from -55°C up to 150°C, allowing use across harsh industrial thermal environments.
What protection should be considered for gate and drain overstress?
Designers should include gate protection to remain within ±30V and implement snubbing or clamp networks to limit transients on the drain at high voltages.
Related links
- Vishay IRF830A Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRF830A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-263
- Vishay IRF830A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-263 IRF830ASPBF
- Toshiba Type N-Channel MOSFET 500 V EnhancementS5Q(J
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220F FDPF5N50T
- Infineon IPD50R Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1
- Infineon IPD50R Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252
- Vishay IRF840LC Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF840LCPBF