Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220

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Subtotal (1 unit)*

Kr.9 15 

(exc. VAT)

Kr.11 44 

(inc. VAT)

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  • Plus 115 unit(s) shipping from 19. januar 2026
  • Plus 41 unit(s) shipping from 19. januar 2026
  • Plus 1 268 unit(s) shipping from 26. januar 2026
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1 - 9Kr. 9,15
10 - 49Kr. 8,35
50 - 99Kr. 7,44
100 - 249Kr. 6,86
250 +Kr. 6,29

*price indicative

Packaging Options:
RS Stock No.:
543-0002
Distrelec Article No.:
301-91-570
Mfr. Part No.:
IRF820PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

500V

Series

IRF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Height

9.01mm

Length

10.41mm

Width

4.7 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating

Repetitive avalanche rated

Simple drive requirements

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