Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220

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Subtotal (1 unit)*

Kr.15 22 

(exc. VAT)

Kr.19 02 

(inc. VAT)

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  • Final 711 unit(s) shipping from 26. januar 2026
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1 - 9Kr. 15,22
10 - 49Kr. 13,73
50 - 99Kr. 12,93
100 - 249Kr. 11,44
250 +Kr. 10,75

*price indicative

Packaging Options:
RS Stock No.:
542-9412
Mfr. Part No.:
IRF820APBF
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-220

Series

IRF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Height

9.01mm

Standards/Approvals

No

Width

4.7 mm

Length

10.41mm

Automotive Standard

No

The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.

Operating junction and storage temperature range - 55 to + 150°C

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