Vishay IRF N-Channel MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-263 IRF510SPBF

Subtotal (50 units, in tubes of 50)*

Kr. 166,10

(exc. VAT)

Kr. 207,60

(inc. VAT)

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Units
Per unit
Per Tube*
50 +Kr. 3,322Kr. 166,10

*price indicative

RS Stock No.:
178-0860
Mfr. Part No.:
IRF510SPBF
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.6A

Maximum Drain Source Voltage Vds

100V

Series

IRF

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

540mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.7W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20, +20V

Typical Gate Charge Qg @ Vgs

8.3nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

175°C

Width

4.83mm

Length

10.67mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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