Vishay Siliconix TrenchFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L

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Subtotal (1 reel of 3000 units)*

Kr.8 925 00 

(exc. VAT)

Kr.11 157 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 2,975Kr. 8 925,00

*price indicative

RS Stock No.:
178-3667
Mfr. Part No.:
SiA106DJ-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Package Type

SC-70-6L

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.0185Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

6.9nC

Maximum Power Dissipation Pd

19W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

1.35 mm

Length

2.2mm

Height

1mm

Automotive Standard

No

RoHS Status: Exempted

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS - Qg Figure-of-Merit (FOM)

Tuned for the lowest RDS – Qoss

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