Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
178-3703
Mfr. Part No.:
SiZ350DT-T1-GE3
Brand:
Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay Siliconix

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

16.7W

Typical Gate Charge Qg @ Vgs

12.1nC

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

150°C

Transistor Configuration

Dual

Maximum Operating Temperature

-55°C

Height

0.75mm

Length

3mm

Width

3 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

RoHS Status: Exempted

TrenchFET® Gen IV power MOSFET

High side and low side MOSFETs form optimized

combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates

efficiency for high frequency switching

APPLICATIONS

Synchronous buck

DC/DC conversion

Half bridge

POL

Related links