Vishay Siliconix TrenchFET Type N-Channel MOSFET, 2 A, 60 V Enhancement, 3-Pin SOT-23

Subtotal (1 reel of 3000 units)*

Kr.7 752 00 

(exc. VAT)

Kr.9 690 00 

(inc. VAT)

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3000 +Kr. 2,584Kr. 7 752,00

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RS Stock No.:
178-3708
Mfr. Part No.:
SQ2364EES-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2nC

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

3W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

1.4 mm

Length

3.04mm

Height

1.02mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

RoHS Status: Exempted

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 8V. It has drain-source resistance of 240mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2A. It has a minimum and a maximum driving voltage of 1.5V and 4.5V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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