Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin TO-252

Subtotal (1 reel of 2000 units)*

Kr.16 612 00 

(exc. VAT)

Kr.20 764 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 8,306Kr. 16 612,00

*price indicative

RS Stock No.:
178-3715
Mfr. Part No.:
SQD40031EL_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

TrenchFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

186nC

Forward Voltage Vf

-1.5V

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

2.38 mm

Height

6.22mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

AEC-Q101

RoHS Status: Exempted

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.2mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 136W and continuous drain current of 100A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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