Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3
- RS Stock No.:
- 178-3920P
- Mfr. Part No.:
- SiSS12DN-T1-GE3
- Brand:
- Vishay Siliconix
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 178-3920P
- Mfr. Part No.:
- SiSS12DN-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -16V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.15mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Length | 3.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 65.7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -16V, +20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.15mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Length 3.15mm | ||
Automotive Standard No | ||
RoHS Status: Exempted
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
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