onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

RS Stock No.:: 178-4242
Mfr. Part No.:: FCP125N65S3R0
Brand:: onsemi

onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.1 199 10

(exc. VAT)

Kr.1 498 90

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

800 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	Kr. 23,982	Kr. 1 199,10
100 - 200	Kr. 19,258	Kr. 962,90
250 - 450	Kr. 18,106	Kr. 905,30
500 - 950	Kr. 17,099	Kr. 854,95
1000 +	Kr. 14,917	Kr. 745,85

*price indicative

RS Stock No.:: 178-4242
Mfr. Part No.:: FCP125N65S3R0
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	FCP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	181W
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Standards/Approvals	No
	Height	16.3mm
	Width	4.7 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series FCP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 181W
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Standards/Approvals No
	Height 16.3mm
	Width 4.7 mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ T_J = 150 °C

Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)

Ultra Low Gate Charge (Typ. Qg = 46 nC)

Optimized Capacitance

Typ. RDS(on) = 105 mΩ

Internal Gate Resistance: 0.5 Ω

Benefits:

Higher system reliability at low temperature operation

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Consummer

Industrial

End Products:

Notebook / Desktop computer / Game console

Telecom / Server

LCD / LED TV

LED Lighting / Ballast

Adapter

onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

FREE delivery for online orders over 500,00 kr

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