onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NTHL110N65S3F

RS Stock No.:: 178-4486
Mfr. Part No.:: NTHL110N65S3F
Brand:: onsemi

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NTHL110N65S3F

Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.141 97

(exc. VAT)

Kr.177 462

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 410 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	Kr. 70,985	Kr. 141,97
20 +	Kr. 61,145	Kr. 122,29

*price indicative

RS Stock No.:: 178-4486
Mfr. Part No.:: NTHL110N65S3F
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Series	NTHL
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	240W
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	58nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Width	4.82 mm
	Standards/Approvals	No
	Length	15.87mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Series NTHL
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 240W
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 58nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Width 4.82 mm
	Standards/Approvals No
	Length 15.87mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 58 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 98 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications:

Telecommunication

Cloud system

Industrial

End Products:

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NTHL110N65S3F

FREE delivery for online orders over 500,00 kr

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