Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

Kr.6 644 00 

(exc. VAT)

Kr.8 304 00 

(inc. VAT)

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2000 +Kr. 3,322Kr. 6 644,00

*price indicative

RS Stock No.:
178-5089
Mfr. Part No.:
IRLR3410TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

155mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

79W

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Height

2.39mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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