Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2

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Subtotal (1 reel of 3000 units)*

Kr.1 569 00 

(exc. VAT)

Kr.1 962 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000Kr. 0,523Kr. 1 569,00
6000 - 12000Kr. 0,497Kr. 1 491,00
15000 +Kr. 0,466Kr. 1 398,00

*price indicative

RS Stock No.:
178-7472
Mfr. Part No.:
BSS138NH6327XTSA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

230mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

360mW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.83V

Maximum Operating Temperature

150°C

Width

1.3 mm

Standards/Approvals

No

Length

2.9mm

Height

1mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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