Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2

RS Stock No.:: 753-2841
Distrelec Article No.:: 304-45-304
Mfr. Part No.:: BSS159NH6327XTSA2
Brand:: Infineon

Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2

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Subtotal (1 pack of 25 units)*

Kr. 106,62

(exc. VAT)

Kr. 133,28

(inc. VAT)

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Units	Per unit	Per Pack*
25 - 100	Kr. 4,265	Kr. 106,63
125 - 475	Kr. 2,192	Kr. 54,80
500 - 1225	Kr. 2,146	Kr. 53,65
1250 +	Kr. 2,091	Kr. 52,28

*price indicative

RS Stock No.:: 753-2841
Distrelec Article No.:: 304-45-304
Mfr. Part No.:: BSS159NH6327XTSA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	360mW
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1.4nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.9mm
	Standards/Approvals	No
	Width	1.3mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 360mW
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1.4nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.9mm
	Standards/Approvals No
	Width 1.3mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 230mA Maximum Continuous Drain Current - BSS159NH6327XTSA2

This MOSFET is a compact N-channel transistor designed for low-power switching and control tasks in automotive and industrial environments. It operates across a wide temperature span and is intended for surface-mounted circuit designs where robust voltage handling and modest current capability are required. The device suits power-management roles within constrained board space and regulated voltage domains.

Features and Benefits:

• 60V drain-source rating enables higher-voltage switching applications
• 8 Ω maximum Rds provides predictable conduction losses
• 230 mA continuous drain current supports small-load drivers
• 360 mW power dissipation limits thermal stress under load
• 1.4 nC typical gate charge allows faster gate transitions
• 20V maximum gate voltage protects gate from overdrive

Applications

• Suitable for low-current automotive control circuits
• Ideal for on-board power-management modules
• Used with sensor interfaces requiring controlled switching
• Can be used for small relay or solenoid drivers
• Suitable for surface-mount prototyping and compact designs

What thermal range can it withstand in harsh environments?

The component functions from -55 °C up to 150 °C, allowing use across extended ambient and engine-bay temperatures.

How does the package affect board assembly and layout?

The SOT-23 3-pin surface-mount package reduces required PCB area and supports automated pick-and-place assembly for compact layouts.

What channel behaviour should designers expect at idle?

It is a depletion-mode N-channel device, so designers should account for channel conduction characteristics when establishing off-state biasing.

Are there limits on mechanical mounting or pin count considerations?

The device is a 3-pin SMD part intended for standard soldering processes with standard footprint constraints.