Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 2500 units)*

Kr.10 842 50 

(exc. VAT)

Kr.13 552 50 

(inc. VAT)

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  • 5 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
2500 +Kr. 4,337Kr. 10 842,50

*price indicative

RS Stock No.:
180-7298
Mfr. Part No.:
SI4900DY-T1-E3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.058Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

4.8mm

Height

1.35mm

Standards/Approvals

IEC 61249-2-21

Width

4 mm

Automotive Standard

No

The Vishay Siliconix SI4900DY series TrenchFET dual N channel power MOSFET has drain to source voltage of 60 V. It is used in LCD TV and CCFL inverter.

Pb-free

Halogen free

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