Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack
- RS Stock No.:
- 180-7312
- Mfr. Part No.:
- SI7216DN-T1-E3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
Kr.21 705 00
(exc. VAT)
Kr.27 132 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 22. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 7,235 | Kr. 21 705,00 |
*price indicative
- RS Stock No.:
- 180-7312
- Mfr. Part No.:
- SI7216DN-T1-E3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPack | |
| Series | SI7216DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 20.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPack | ||
Series SI7216DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 20.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SI7216DN is a dual N-channel MOSFET having drain to source(Vds) voltage of 40V.The gate to source voltage(VGS) is 20V. It is having power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.032ohms at 10VGS and 0.039ohms at 4.5VGS. Maximum drain current 6A.
Trench FET power MOSFET
Low thermal resistance Power PAK package with small size and low 1.07 mm profile
100 % Rg and UIS tested
Compliant to RoHS directive 2002/95/EC
Related links
- Vishay Dual SI7216DN Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SI4946BEY-T1-E3
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- Vishay Dual TrenchFET 2 Type P 5.3 A 8-Pin SO-8
