Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

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Subtotal (1 pack of 20 units)*

Kr.168 06 

(exc. VAT)

Kr.210 08 

(inc. VAT)

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Per Pack*
20 - 80Kr. 8,403Kr. 168,06
100 - 180Kr. 6,304Kr. 126,08
200 - 480Kr. 5,554Kr. 111,08
500 - 980Kr. 5,411Kr. 108,22
1000 +Kr. 5,28Kr. 105,60

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Packaging Options:
RS Stock No.:
180-7972
Mfr. Part No.:
SQJ457EP-T1_GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

60V

Series

SQJ

Package Type

PowerPAK SO-8L

Pin Count

8

Maximum Drain Source Resistance Rds

0.025Ω

Typical Gate Charge Qg @ Vgs

65nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

68W

Forward Voltage Vf

1.2V

Transistor Configuration

Single

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101

Length

6.15mm

Width

5.13 mm

Height

1.14mm

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications


• Adaptor switches

• DC/DC primary switches

• Load switches

• Power management

Certifications


• AEC-Q101 qualified

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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